Texas Instruments LMG3614 650V 170mΩ GaN Power FET
Texas Instruments LMG3614 650V 170mΩ GaN Power FET is intended for switch-mode power-supply applications. The LMG3614 reduces component count and simplifies design by integrating the GaN FET and gate driver in an 8mm by 5.3mm QFN package. Programmable turn-on slew rates provide EMI and ringing control.
The Texas Instruments LMG3614 supports burst-mode operation and converter light-load efficiency requirements with fast start-up times and low quiescent currents. Protection features include overtemperature protection and under-voltage lockout (UVLO), which is reported with the open-drain FLT pin.
Features
- 650V 170mΩ GaN power FET
- Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control
- Overtemperature protection with FLT pin reporting
- AUX quiescent current of 55µA
- Maximum supply and input logic pin voltage of 26V
- 8mm × 5.3mm QFN package with thermal pad
Applications
- AC/DC adapters and chargers
- AC/DC USB wall outlet power supplies
- AC/DC auxiliary power supplies
- Television power supplies
- Mobile wall charger design
- USB wall power outlet
- Auxiliary-power supplies
- SMPS power supply for TV
- LED power supply
Additional Resources
Simplified Block Diagram
Development Tool
Texas Instruments LMG3624EVM-081 Converter Evaluation Module
Demonstrates capabilities of the LMG3624, a 650V 120mΩ GaN FET in a USB Type-C® PD off-line adapter.
發佈日期: 2025-04-08
| 更新日期: 2025-07-07