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onsemi NVMFS6H8x Power MOSFETs

onsemi NVMFS6H8x Power MOSFETs offer 80V, single N-channel, and a small footprint for a compact design. These power MOSFETs are available in 2.1mΩ, 2.8mΩ, 3.7mΩ, and 3.2mΩ RDS(on) resistance ranges. Features include low RDS(on) to minimize conduction losses, low QG, and low capacitance. The NVMFS6H8x power MOSFETs are RoHS compliant, PPAP capable, and AEC-Q101 qualified. These power MOSFETs operate at -55°C to 175°C operating temperature range.

Features

  • Small footprint for a compact design with 5mm x 6mm dimension
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • Wettable Flank (WF) option for enhanced optical inspection
  • -55°C to 175°C operating temperature range
  • AEC-Q101 qualified and PPAP capable
  • These devices are Pb-free and are RoHS compliant

Applications

  • Automotive
  • DC-DC converters
  • Point-of-Load (POL)
  • Servers

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MOSFET具有低RDS(ON)、超低QG及低Qg x RDS(ON)，是關鍵品質因數 (FOM)。

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View Results ( 5 ) Page
零件編號 規格書 Id - C連續漏極電流 Rds On - 漏-源電阻 Qg - 閘極充電 Pd - 功率消耗
NVMFS6H864NLT1G NVMFS6H864NLT1G 規格書 22 A 29 mOhms 9 nC 33 W
NVMFS6H800NT1G NVMFS6H800NT1G 規格書 203 A 2.1 mOhms 85 nC 200 W
NVMFS6H801NT1G NVMFS6H801NT1G 規格書 157 A 2.8 mOhms 64 nC 166 W
NVMFS6H818NLT1G NVMFS6H818NLT1G 規格書 135 A 3.2 mOhms 64 nC 140 W
NVMFS6H818NT1G NVMFS6H818NT1G 規格書 123 A 3.7 mOhms 46 nC 136 W
發佈日期: 2018-06-11 | 更新日期: 2022-10-21