onsemi SUPERFET III® 650V N-Channel MOSFET
onsemi SUPERFET III® 650V 190mΩ N-Channel MOSFET is ideal for various power systems for miniaturization and higher efficiency. The device utilizes charge balance technology for low on-resistance and lower gate-charge performance. The technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. SUPERFET III® 650V 190mΩ N-Channel MOSFETs are ideal for automotive onboard chargers and DC/DC converters for hybrid electric vehicles.
Features
- N-Channel transistor polarity
- 1x channel
- TO-263-3 packaging
- SMD/SMT mounting style
- 650V VDS drain-source breakdown
- 20A continuous drain voltage
- 190mΩ RDS(on) drain-source resistance
- 30V gate-source voltage
- 5V gate-source threshold
- 34nC gate charge
- 162W power dissipation
- 3ns fall time
- 13ns rise time
- Pb-Free and are RoHS compliant
- 100% avalanche stress tested
- -55°C to +150°C operating temperature range
Applications
- Automotive onboard charger
- Automotive DC/DC converter for hybrid electric vehicle
Related MOSFETs
onsemi SuperFET® III MOSFET
高電壓超級結MOSFET採用電荷平衡技術，可大幅減少導通電阻。
Related Applications
發佈日期: 2019-10-24
| 更新日期: 2025-03-04