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Nexperia DFN0606 Trench MOSFETs

Nexperia DFN0606 Trench MOSFETs are designed to utilize Trench MOSFET technology to provide low threshold voltage and very fast switching. These Nexperia MOSFETs feature electrostatic discharge (ESD) protection and are available in a leadless ultra-small DFN0606-3 (SOT8001) surface-mount (SMD) plastic package. Typical applications include mobile phones, wearable and portable devices, mobile phone accessories, headsets, earphones, and hearing aids.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • 2N7002 functionality in a DFN0606 package
  • 36% space saving compared to DFN1006
  • Up to 2kV ESD protection
  • 0.6mm x 0.6mm footprint, 0.37mm height

Specifications

  • Ultra-low RDS(on) down to 170mΩ
  • Low voltage drive (VGS(th)= 0.7V typical)
  • 20V to 60V voltage range

Applications

  • Mobile phones
  • Wearable and portable devices
  • Mobile phone accessories
  • Headsets, earphones, and hearing aids

Videos

Application Note

Additional Resources

Application Circuit Diagram

Application Circuit Diagram - Nexperia DFN0606 Trench MOSFETs

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零件編號 規格書 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs th - 門源門限電壓 Qg - 閘極充電
NX5008NBKHH NX5008NBKHH 規格書 50 V 350 mA 2.8 Ohms 900 mV 470 pC
PMH1200UPEH PMH1200UPEH 規格書 30 V 520 mA 1.6 Ohms 950 mV 400 pC
PMH850UPEH PMH850UPEH 規格書 30 V 600 mA 1 Ohms 950 mV 600 pC
NX138BKHH NX138BKHH 規格書 60 V 380 mA 2.3 Ohms 1.5 V 500 pC
NX7002BKHH NX7002BKHH 規格書 60 V 350 mA 2.8 Ohms 1.1 V 1 nC
PMH260UNEH PMH260UNEH 規格書 20 V 1.2 A 310 mOhms 950 mV 630 pC
PMH550UNEH PMH550UNEH 規格書 30 V 770 mA 670 mOhms 450 mV 400 pC
PMH550UPEH PMH550UPEH 規格書 20 V 800 mA 640 mOhms 950 mV 600 pC
PMH600UNEH PMH600UNEH 規格書 20 V 800 mA 620 mOhms 450 mV 310 pC
PMH950UPEH PMH950UPEH 規格書 20 V 530 mA 1.4 Ohms 950 mV 290 pC
發佈日期: 2020-05-21 | 更新日期: 2024-05-03