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WeEn Semiconductors WNS Silicon Carbide Schottky Diodes

WeEn Semiconductors WNS Silicon Carbide Schottky Diodes are designed for high-frequency switched-mode power supplies. These diodes feature highly stable switching performance, extremely fast reverse recovery time, superior efficiency to silicon diode alternatives, and reduced losses in associated MOSFET. The WNS Schottky diodes offer up to 1200V of repetitive peak reverse voltage and a -55°C to 175°C storage temperature range. Typical applications include power factor correction, telecom/server SMPS, UPS, PV inverter, PC Silverbox, LED/OLED tv, and motor drives.

Features

  • Highly stable switching performance
  • Extremely fast reverse recovery time
  • Superior in efficiency to silicon diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant

Specifications

  • Up to 1200V of repetitive peak reverse voltage
  • 650V of reverse voltage
  • 4A to 10A average forward current range IF(AV)
  • -55°C to 175°C of storage temperature
  • 175°C of junction temperature

Applications

  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC silver box
  • LED/OLED TV
  • Motor drives

Related Products

WeEn Semiconductors WNSC Silicon Carbide Schottky Diodes

Optimized for use in switched-mode power supplies, in TO-220-2, TO-247-2, and TO-247-3 packages.

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零件編號 規格書 If - 順向電流 Vf - 順向電壓 Ifsm - 順向浪湧電流 Ir - 反向電流 Vrrm - 重複反向電壓 Vr - 反向電壓 封裝/外殼
WNSC5D046506Q WNSC5D046506Q 規格書 4 A 1.45 V 28 A 20 uA 650 V 650 V TO-220-2L
WNSC5D066506Q WNSC5D066506Q 規格書 6 A 1.45 V 40 A 30 uA 650 V 650 V TO-220-2L
WNSC2D151200W6Q WNSC2D151200W6Q 規格書
發佈日期: 2022-02-16 | 更新日期: 2022-06-15