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Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs

Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. These N-Channel (D-S) MOSFETs are PWM optimized, 100% Rg tested, halogen-free, and RoHS compliant. The SI78 MOSFETs are used in DC/DC converters, primary side switches for DC/DC applications, and synchronous rectifiers.

Features

  • New low Thermal Resistance PowerPAK® package with low 1.07mm profile
  • 100% Rg tested
  • Halogen-free
  • RoHS compliant

Applications

  • DC/DC converters
  • primary side switches for DC/DC applications
  • Synchronous rectifiers

Package Dimensions

Vishay Semiconductors SI78 N-Channel (D-S) MOSFETs
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零件編號 規格書 封裝/外殼 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Qg - 閘極充電 Pd - 功率消耗 互導 - 最小值 下降時間 上升時間 標準斷開延遲時間 標準開啟延遲時間
SI7812DN-T1-E3 SI7812DN-T1-E3 規格書 PowerPAK-1212-8 75 V 16 A 37 mOhms 16 nC 52 W 23 S 50 ns 130 ns 35 ns 20 ns
SI7812DN-T1-GE3 SI7812DN-T1-GE3 規格書 PowerPAK-1212-8 75 V 16 A 37 mOhms 16 nC 52 W 23 S 50 ns 130 ns 35 ns 20 ns
SI7848BDP-T1-E3 SI7848BDP-T1-E3 規格書 PowerPAK-SO-8 40 V 47 A 9 mOhms 33 nC 36 W 56 S 10 ns 12 ns 25 ns 25 ns
SI7898DP-T1-E3 SI7898DP-T1-E3 規格書 PowerPAK-SO-8 150 V 3 A 85 mOhms 17 nC 1.9 W 15 S 17 ns 10 ns 24 ns 9 ns
SI7846DP-T1-GE3 SI7846DP-T1-GE3 規格書 PowerPAK-SO-8 150 V 24.5 A 50 mOhms 30 nC 1.9 W 18 S 10 ns 7 ns 22 ns 12 ns
SI7880ADP-T1-E3 SI7880ADP-T1-E3 規格書 PowerPAK-SO-8 30 V 40 A 3 mOhms 84 nC 83 W 120 S 30 ns 14 ns 96 ns 20 ns
SI7898DP-T1-GE3 SI7898DP-T1-GE3 規格書 PowerPAK-SO-8 150 V 3 A 85 mOhms 17 nC 1.9 W 15 S 17 ns 10 ns 24 ns 9 ns
SI7850ADP-T1-GE3 SI7850ADP-T1-GE3 規格書 PowerPAK-SO-8 60 V 12 A 19.5 mOhms 11.1 nC 35.7 W 39 S 10 ns 21 ns 10 ns 7 ns
SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 規格書 PowerPAK-SO-8 30 V 15 A 4.2 mOhms 27 nC 1.8 W 85 S 20 ns 13 ns 62 ns 20 ns
SI7806ADN-T1-E3 SI7806ADN-T1-E3 規格書 PowerPAK-1212-8 30 V 9 A 11 mOhms 13.2 nC 1.5 W 32 S 10 ns 10 ns 33 ns 13 ns
發佈日期: 2024-01-09 | 更新日期: 2024-01-24