Vishay Semiconductors SI73 TrenchFET® Power MOSFETs

Vishay Semiconductors SI73 TrenchFET® Power MOSFETs are available in a new low thermal resistance PowerPAK® package with a low 1.07mm profile. The TrenchFET® Power MOSFETs are 100% Rg/UIS tested and halogen-free. These SI73 power MOSFETs are ideally used in DC/DC converters.

Features

  • New low thermal resistance PowerPAK® package with low 1.07mm profile
  • 100% Rg/UIS tested
  • Halogen-free

Applications

  • DC/DC converters

Package Dimensions

Vishay Semiconductors SI73 TrenchFET® Power MOSFETs
View Results ( 11 ) Page
零件編號 規格書 封裝/外殼 晶體管極性 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs th - 門源門限電壓 Qg - 閘極充電 Pd - 功率消耗 互導 - 最小值 下降時間 上升時間 標準斷開延遲時間 標準開啟延遲時間
SI7336ADP-T1-E3 SI7336ADP-T1-E3 規格書 PowerPAK-SO-8 N-Channel 30 V 30 A 3 mOhms 1 V 36 nC 5.4 W 110 S 32 ns 16 ns 90 ns 24 ns
SI7386DP-T1-GE3 SI7386DP-T1-GE3 規格書 PowerPAK-SO-8 N-Channel 30 V 19 A 7 mOhms 2.5 V 11.5 nC 5 W 50 S 10 ns 9 ns 35 ns 12 ns
SI7336ADP-T1-GE3 SI7336ADP-T1-GE3 規格書 PowerPAK-SO-8 N-Channel 30 V 30 A 3 mOhms 1 V 36 nC 5.4 W 110 S 32 ns 16 ns 90 ns 24 ns
SI7309DN-T1-GE3 SI7309DN-T1-GE3 規格書 PowerPAK-1212-8 P-Channel 60 V 8 A 146 mOhms 3 V 14.5 nC 19.8 W 10 S 35 ns 15 ns 30 ns 25 ns
SI7370DP-T1-GE3 SI7370DP-T1-GE3 規格書 PowerPAK-SO-8 N-Channel 60 V 9.6 A 11 mOhms 4 V 57 nC 5.2 W 50 S 30 ns 12 ns 16 ns 50 ns
SI7370DP-T1-E3 SI7370DP-T1-E3 規格書 PowerPAK-SO-8 N-Channel 60 V 9.6 A 11 mOhms 4 V 57 nC 5.2 W 50 S 30 ns 12 ns 16 ns 50 ns
SI7309DN-T1-E3 SI7309DN-T1-E3 規格書 PowerPAK-1212-8 P-Channel 60 V 8 A 146 mOhms 3 V 14.5 nC 19.8 W 10 S 35 ns 15 ns 30 ns 25 ns
SI7386DP-T1-E3 SI7386DP-T1-E3 規格書 PowerPAK-SO-8 N-Channel 30 V 19 A 7 mOhms 2.5 V 11.5 nC 5 W 50 S 10 ns 9 ns 35 ns 12 ns
SI7315DN-T1-GE3 SI7315DN-T1-GE3 規格書 PowerPAK-1212-8 P-Channel 150 V 8.9 A 315 mOhms 4 V 19.5 nC 52 W 10 S 8 ns 9 ns 23 ns 8 ns
SI7370ADP-T1-GE3 SI7370ADP-T1-GE3 規格書 PowerPAK-1212-8 N-Channel 60 V 50 A 57 mOhms 4 V 8.4 nC 69.4 W 12 S 20 ns 9 ns 40 ns 20 ns
發佈日期: 2024-01-08 | 更新日期: 2024-01-24