Taiwan Semiconductor Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.

Features

  • Low RDS(ON) to minimize conductive losses
  • Low gate charge for fast power switching
  • 100% UIS and Rg tested
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • BLDC motor control
  • Battery power management
  • DC-DC converters
  • Secondary synchronous rectification

Dimensions (mm)

Mechanical Drawing - Taiwan Semiconductor Dual N-Channel Power MOSFETs

Pad Layout (mm)

Mechanical Drawing - Taiwan Semiconductor Dual N-Channel Power MOSFETs
發佈日期: 2019-10-21 | 更新日期: 2023-06-26