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Taiwan Semiconductor TSM060N03PQ33 N-Channel Power MOSFET

Taiwan Semiconductor TSM060N03PQ33 N-Channel Power MOSFET features a 30V drain-source voltage, 62A continuous drain current, and 6mΩ on-state resistance. The TSM060N03PQ33 MOSFET provides a low gate charge for fast power switching and minimizes conductive losses. Applications include DC-DC converters, battery power management, and O-ring FETs or load switches.

Features

  • Low RDS(ON) to minimize conductive loss
  • Low gate charge for fast power switching
  • 100% UIS and Rg tested
  • PDFN-33 package
  • Moisture Sensitivity Level (MSL) 1
  • Lead-free and Halogen-free
  • RoHS compliant

Applications

  • DC-DC converters
  • Battery power management
  • O-ring FET/load switch

Specifications

  • 30V minimum drain-source breakdown voltage
  • ±20V gate-source voltage
  • 15A continuous drain current when TA = +25°C, 62A when TC = +25°C
  • 248A pulsed drain current
  • 29A single pulse avalanche current
  • 42mJ single pulse avalanche energy
  • -55°C to +150°C temperature range
  • Total power dissipation
    • 40W when TC = +25°C, 8W when TC = +125°C
    • 2.3W when TA = +25°C, 0.5W when TA = +125°C
  • Thermal resistance
    • 3.1°C/W junction-to-case
    • 53°C/W junction-to-ambient
發佈日期: 2023-01-10 | 更新日期: 2023-01-22