Taiwan Semiconductor 300V NPN Bipolar Junction Transistor
Taiwan Semiconductor 300V NPN Bipolar Junction Transistor is ideal for high-voltage switching and driver applications. A negative-positive-negative BJT transistor uses both electrons and holes as charge carriers. Taiwan Semiconductor 300V NPN Bipolar Junction Transistor (TSC497CXRFG) has a maximum collector emitter voltage of 300V and a maximum emitter base voltage of 5V. The transistor is packaged in the small outline transistor (SOT-23-3) three-pin surface mount.
Features
- 300V VCEO collector emitter voltage
- 300V VCBO collector base voltage
- 5V VEBO emitter base voltage
- 200mV collector-emitter saturation voltage
- 1A maximum DC collector current
- 75MHz gain bandwidth product fT
- Epitaxial planar type
- NPN silicon transistor
- -55°C to +150°C operating temperature range
- Halogen-free according to IEC 61249-2-21
- SOT-23-3 packaging
Applications
- Consumer electronics
- High-voltage switching
- High-voltage drivers
發佈日期: 2019-07-02
| 更新日期: 2023-06-26