Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs
Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs utilize TrenchFET® Gen IV power MOSFET technology. The SiR186LDP MOSFETs feature very low RDS Qg figure-of-merit (FOM) and are tuned for the lowest RDS Qoss FOM. The Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs are ideal for synchronous rectification, primary-side switch, DC/DC converter, and motor drive switch applications.
Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100% Rg and UIS tested
Applications
- Synchronous rectification
- Primary side switch
- DC/DC converter
- Motor drive switch
Associated Products
Vishay / Siliconix TrenchFET第四代MOSFET
在4.5V電壓下可提供低至1.35mΩ的工業低導通電阻。
Vishay / Siliconix TrenchFET® MOSFETs
Industry-best on-resistance in a variety of package configurations.
Circuit Diagram
發佈日期: 2021-03-11
| 更新日期: 2022-03-11