SanDisk iNAND® MC EU511 UFS 3.0 Embedded Flash Drive
SanDisk iNAND® MC EU511 UFS 3.0 Embedded Flash Drive features Generation 6 iNAND® SmartSLC. The devices are ready for 5G devices with turbo. The EU511 has sequential write speeds up to 800MB/s, with up to 40% Random Read. It also has a 100% Random Write performance improvement compared to the predecessor products to enable Machine Learning, Augmented Reality, and Virtual Reality workloads.
Features
- UFS 3.0, Gear4, 2-Lane
- iNAND® SmartSLC Gen 6 technology
- UFS 3.0 RPMB multi-region configuration
- UFS 3.0 Error History
- UFS 3.0 Thermal notification
- Field Firmware Upgrade (FFU)
Applications
- Machine learning
- Augmented reality
- Virtual reality
View Results ( 17 ) Page
| 零件編號 | 規格書 | 說明 |
|---|---|---|
| SDINFDQ6-64G-XI | 新通用閃存儲存-UFS IX EU552 UFS 64GB BGA | |
| SDINFDK4-128G | 新通用閃存儲存-UFS MC EU521 UFS 128GB BGA | |
| SDINEDK4-128G |  |
新通用閃存儲存-UFS MC EU511 UFS 128GB BGA |
| SDINFDQ6-128G-XI | 新通用閃存儲存-UFS IX EU552 UFS 128GB BGA | |
| SDINFDQ6-128G-ZA1 | |
新通用閃存儲存-UFS AT EU552 UFS 128GB BGA |
| SDINFDQ6-128G-I | 新通用閃存儲存-UFS IX EU552 UFS 128GB BGA | |
| SDINFDQ6-128G-XA1 | |
新通用閃存儲存-UFS AT EU552 UFS 128GB BGA |
| SDINFDQ6-256G-I | 新通用閃存儲存-UFS IX EU552 UFS 256GB BGA | |
| SDINFDQ6-256G-XI | 新通用閃存儲存-UFS IX EU552 UFS 256GB BGA | |
| SDINFDQ6-256G-XA1 | |
新通用閃存儲存-UFS AT EU552 UFS 256GB BGA |
發佈日期: 2022-08-04
| 更新日期: 2024-04-16