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ROHM Semiconductor VSxUA1LBTBR1 Transient Voltage Suppressors

ROHM Semiconductor VSxUA1LBTBR1 Transient Voltage Suppressors are high-reliability TVS diodes. These voltage suppressors feature a 600W peak pulse power and 150°C junction temperature. The VSxUA1LBTBR1 transient voltage suppressors include a Silicon epitaxial planar structure. These TVS diodes come in a small power mold type with a DO-214AA (SMB) package. These transient voltage suppressors are ideal for surge protection applications.

Features

  • Silicon epitaxial planar structure
  • High reliability
  • 600W peak pulse power
  • Small mold type

Applications

  • Surge protection
View Results ( 20 ) Page
零件編號 規格書 操作電壓 鉗位電壓 擊穿電壓 Ipp - 峰值脈衝電流
VS26VUA1LBTBR1 VS26VUA1LBTBR1 規格書 26 V 42.1 V 28.9 V 14.3 A
VS13VUA1LBTBR1 VS13VUA1LBTBR1 規格書 13 V 21.5 V 13 V 28 A
VS30VUA1LBTBR1 VS30VUA1LBTBR1 規格書 30 V 48.4 V 30 V 12.4 A
VS5V0UA1LBTBR1 VS5V0UA1LBTBR1 規格書 5 V 10.5 V 5 V 57 A
VS10VUA1LBTBR1 VS10VUA1LBTBR1 規格書 10 V 17 V 11.1 V 35.3 A
VS11VUA1LBTBR1 VS11VUA1LBTBR1 規格書 11 V 18.2 V 12.2 V 33 A
VS12VUA1LBTBR1 VS12VUA1LBTBR1 規格書 12 V 19.9 V 13.3 V 30.2 A
VS14VUA1LBTBR1 VS14VUA1LBTBR1 規格書 14 V 23.2 V 15.6 V 25.9 A
VS15VUA1LBTBR1 VS15VUA1LBTBR1 規格書 15 V 24.4 V 16.7 V 24.6 A
VS16VUA1LBTBR1 VS16VUA1LBTBR1 規格書 16 V 26 V 17.8 V 23.1 A
發佈日期: 2024-05-24 | 更新日期: 2025-06-17