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ROHM Semiconductor RQxAT P-Channel MOSFETs

ROHM Semiconductor RQxAT P-Channel features surface mount packaging with low ON resistance and are 100% Rg and UIS tested. These P-channel MOSFETs offer a gate-source voltage of ±20V. The RQ3N025AT and RQ5L030AT MOSFETs feature a maximum drain-source ON resistance of 240mΩ and 99mΩ, respectively. These P-channel MOSFETs are RoHS compliant and halogen-free. The RQ3N025AT and RQ5L030AT MOSFETs offer a drain-source voltage of -80V and -60V, respectively. These P-channel MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching and motor drives.

Features

  • Low ON resistance
  • High power small mold package (HSMT8) (RQ3N025AT)
  • Small Surface Mount package (TSMT3) (RQ5L030AT)
  • Pb-free plating
  • RoHS compliant
  • Halogen free
  • 100% Rg and UIS tested

Applications

  • Switching
  • Motor drives
View Results ( 2 ) Page
零件編號 規格書 下降時間 互導 - 最小值 Id - C連續漏極電流 Pd - 功率消耗 Qg - 閘極充電 Rds On - 漏-源電阻 上升時間 最低工作溫度 最高工作溫度
RQ3N025ATTB1 RQ3N025ATTB1 規格書 15 ns 2.4 S 7 A 14 W 13 nC 240 mOhms 6.4 ns - 55 C + 150 C
RQ5L030ATTCL RQ5L030ATTCL 規格書 31 ns 4 S 3 A 1 W 17.2 nC 99 mOhms 17 ns - 55 C + 150 C
發佈日期: 2025-07-30 | 更新日期: 2025-08-21