ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET

ROHM Semiconductor RQ5G040AT -40V P-Channel Small Signal MOSFET is a -40V drain-source voltage (V_DSS) and ±4.0A continuous drain current (I_D) rated device. The drain-source on-state resistance [R_DS(ON)] is 46.0mΩ (max.) (V_GS = -10V, I_D = -4.0A) and comes in a 2.8mm x 2.9mm SOT-346T (TSMT3) package. The ROHM Semiconductor RQ5G040AT MOSFET is ideal for switching and motor drive applications.

Features

Low on-resistance
Small surface mount package - SOT-346T (TSMT3)
Pb-free lead plating and RoHS-compliant

Halogen-free
100% Rg and UIS tested

Applications

Switching
Motor drives

Specifications

Drain-source on-state resistance [R_DS(ON)]
- 46.0mΩ (max.) (V_GS = -10V, I_D = -4.0A)
- 57.0mΩ (max.) (V_GS = -4.5V, I_D = -4.0A)
1.0W power dissipation (P_D)

Total gate charge (Q_g)
- 16.8nC (typ.) (V_DD = -20V, I_D = -4A, V_GS = -10V)
- 8.5nC (typ.) (V_DD = -20V, I_D = -4A, V_GS = -4.5V)
+150°C junction temperature (T_j)