ROHM Semiconductor RBx8 Schottky Barrier Diodes
ROHM Semiconductor RBx8 Schottky Barrier Diodes with silicon epitaxial planar structure offer up to 1A average rectified forward current. These diodes feature high reliability, low IR, and up to 5A peak forward surge current. The RBx8 Schottky barrier diodes can be stored in a -55°C to 150°C temperature range. These diodes are ideal for general rectification applications.
Features
- Up to 1A average rectified forward current
- High reliability
- Low IR
- Up to 5A peak forward surge current
- -55°C to 150°C storage temperature range
- AEC-Q101 qualified (RB178VYM-40FH, RB178VYM-60FH, RB568VYM150FH, and RB588VYM100FH)
- Ideal for general rectification
View Results ( 8 ) Page
| 零件編號 | If - 順向電流 | Ifsm - 順向浪湧電流 | Ir - 反向電流 | Vf - 順向電壓 | Vr - 反向電壓 | Vrrm - 重複反向電壓 |
|---|---|---|---|---|---|---|
| RB178VAM-40TR | 1 A | 5 A | 300 nA | 790 mV | 40 V | 40 V |
| RB178VYM-40FHTR | 1 A | 5 A | 300 nA | 790 mV | 40 V | 40 V |
| RB568VAM150TR | 500 mA | 3 A | 400 nA | 950 mV | 150 V | 150 V |
| RB568VYM150FHTR | 500 mA | 3 A | 400 nA | 950 mV | 150 V | 150 V |
| RB588VAM100TR | 700 mA | 150 nA | 850 mV | 100 V | 100 V | |
| RB588VYM100FHTR | 700 mA | 5 A | 150 nA | 850 mV | 100 V | 100 V |
| RB178VAM-60TR | 1 A | 5 A | 800 nA | 820 mV | 60 V | 60 V |
| RB178VYM-60FHTR | 1 A | 5 A | 800 nA | 820 mV | 60 V | 60 V |
發佈日期: 2025-05-20
| 更新日期: 2025-06-26