ROHM Semiconductor PBZTBR1x Zener Diodes
ROHM Semiconductor PBZTBR1x Zener Diodes feature high reliability and a small power mold type with a silicon epitaxial planar structure. These zener diodes offer 1000mW power dissipation and 150°C junction temperature. The PBZTBR1x zener diodes are stored at -55°C to 150°C temperature range. These zener diodes are available in the DO-214AA(SMB) package. The PBZTBR1x zener diodes are used in voltage regulation.
Features
- High reliability
- Small power mold type
- Silicon epitaxial planar structure
- 1000mW power dissipation
- 150°C junction temperature
- 55°C to 150°C storage temperature range
Dimension Diagram
View Results ( 34 ) Page
| 零件編號 | Vz - Zener電壓 | 齊納電流 | 測試電流 | Ir - 反向電流 | Pd - 功率消耗 | 產品類型 | 規格書 |
|---|---|---|---|---|---|---|---|
| PBZTBR110B | 10 V | 10 uA | 40 mA | 10 uA | 1 W | Zener Diodes |  |
| PBZTBR111B | 11 V | 10 uA | 20 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR112B | 12 V | 10 uA | 20 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR113B | 13 V | 10 uA | 20 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR115B | 15 V | 10 uA | 20 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR116B | 16 V | 10 uA | 20 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR118B | 18 V | 10 uA | 20 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR12.0B | 2 V | 200 uA | 40 mA | 10 uA | 1 W | Zener Diodes | |
| PBZTBR12.2B | 2.2 V | 200 uA | 40 mA | 200 uA | 1 W | Zener Diodes | |
| PBZTBR12.4B | 2.4 V | 200 uA | 40 mA | 200 uA | 1 W | Zener Diodes | |
發佈日期: 2024-03-07
| 更新日期: 2024-04-02