Qorvo TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm Gallium-Nitride (GaN) on Silicon Carbide (SiC) High Electron Mobility Transistors (HEMT) which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions.
These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52% and 78.3% which makes the these devices appropriate for high efficiency applications.
Features
- Frequency Range: DC to 18GHz
- Technology: 0.25um Power GaN on SiC
- Lead-free and RoHS compliant
Applications
- Defense and aerospace
- Broadband wireless
Associated Products
Qorvo GaN Solutions
GaN-based solutions offer greater power density, efficiency, frequency range and ruggedness.
發佈日期: 2014-03-11
| 更新日期: 2022-03-11