Qorvo TGA2307-SM 50W GaN Power Amplifier
Qorvo TGA2307-SM 50W GaN Power Amplifier operates from 5GHz to 6GHz and features a copper alloy base for superior thermal management. Developed using Qorvo's 0.25µm GaN (Gallium-Nitride) on SiC (Silicon Carbide) production process, the TGA2307-SM amplifier achieves greater than 47dBm of saturated output power with a power-added efficiency greater than 44% and a large signal gain greater than 20dB. The RF ports are fully matched to 50Ω with integrated DC blocking capacitors, making the TGA2307 amplifier ideally suited to support both commercial and military applications.
The Qorvo TGA2307-SM GaN Power Amplifier is offered in a 6mm x 6mm plastic overmold QFN package to support low cost board assembly techniques. This device is lead-free and RoHS compliant.
Features
- 5.0GHz to 6.0GHz frequency range
- >47dBm saturated output power (PSAT) at PIN = 27dBm
- >44.4% Power Added Efficiency (PAE) at PIN = 27dBm
- >26dB small signal gain
- >17dB input return loss
- >20dB large signal gain at PIN = 27dBm
- Bias Condition: VD = 28V, IDQ = 500mA
- Pulsed Operation
- 6mm x 6mm x 0.85mm QFN package
- Halogen free, Pb-free, and RoHS compliant
Applications
- C-Band Radar
- Satellite Communications (Satcom)
- Multi-Band VSAT
- Cellular Infrastructure Base Station
- Repeaters / Boosters / DAS
- Point-to-Point Radio
Block Diagram
發佈日期: 2015-12-18
| 更新日期: 2022-03-11