Qorvo QPD1016LEVB01 Evaluation Board
Qorvo QPD1016LEVB01 Evaluation Board is a demonstration and development platform for the QPD1016L GaN RF Transistor. The QPD1016L is a 500W (P3dB) pre-matched discrete Gallium Nitride on Silicon Carbide High-Electron Mobility Transistor (GaN on SiC HEMT) operating from DC to 1.7GHz. The QPD1016L provides a linear gain of 18dB at 1.3GHz and features a drain efficiency of 67% at 3dB compression. The device can support pulsed and linear operations.
The Qorvo QPD1016LEVB01 Evaluation Board features a pre-installed QPD1016L RF Transistor in an industry-standard air-cavity NI-780 package. The Evaluation Board provides an example application circuit, allowing rapid prototyping when incorporated into existing designs.
Features
- Pre-installed QPD1016L RF Transistor
- RO4350B 0.020" thickness with 2oz copper cladding
- 3.98” x 3.98” PCB
Supported Device
Qorvo QPD1016L GaN RF Transistor
500W (P3dB) discrete GaN on SiC HEMT operating from 420MHz to 450MHz.
Board Layout
發佈日期: 2022-07-11
| 更新日期: 2022-07-14