Qorvo QPD0020 GaN RF Power Transistors
Qorvo QPD0020 GaN RF Power Transistors are 35W unmatched discrete GaN on SiC HEMT which operates from DC to 6GHz on a +48V supply rail. The devices are suited for base station, radar, and communications applications. The transistors support CW and pulsed mode of operations. The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.Features
- Operating frequency range DC to 6GHz
- Operating drain voltage +48V
- Maximum output power (PSAT) 34.7W
- Maximum drain efficiency 77.8%
- Efficiency-tuned P3dB gain 18.8dB
- Surface mount plastic package
Applications
- W-CDMA/LTE
- Macrocell base station driver
- Microcell base station
- Small cell final stage
- Active antenna
- Land mobile and military radio communications
- General-purpose applications
Block Diagram
發佈日期: 2021-11-29
| 更新日期: 2022-03-11
