PANJIT PJQ1902 30V N-Channel MOSFET
PANJIT PJQ1902 30V N-Channel MOSFET features 2KV HBM ESD protection, lead-free in compliance, and is available in the DFN3L package. The device comes with a 30V drain-source voltage, ±10V gate-source voltage, 500mA continuous drain current, 1500mA pulsed drain current, and 25°C, 700mW power dissipation. The MOSFET features -55°C to 150°C operating, junction, and storage temperature range. The PJQ1902 MOSFET is ideally used in switch load and PWM application etc.
Features
- RDS (ON), VGS@4.5V, ID@350mA<1.2Ω
- RDS (ON), VGS@2.5V, ID@200mA<1.6Ω
- RDS (ON), VGS@1.8V, ID@80mA<2.3Ω
- RDS (ON), VGS@1.5V, ID@10mA<2.5Ω (Typ.)
- Specially designed for switch load, PWM application, etc.
- ESD protected 2KV HBM
- Lead-free in compliance with EU RoHS 2011/65/EU directive
- Green molding compound as per IEC61249 Std. (Halogen-free)
Specifications
- 30V (VDS) drain-source voltage
- ±10V (VGS) gate-source voltage
- 500mA (ID) continuous drain current
- 1500mA (IDM) pulsed drain current
- 25°C (Ta), 700mW (PD) power dissipation
- -55°C to 150°C (TJ, TSTG) operating, junction and storage temperature range
- 175°C/W (RθJA ) typical thermal resistance
- DFN3L package case
- Solderable per MIL-STD-750 method 2026 terminals
- 0.00004 ounces, 0.0011 grams approx weight
- Two markings
Videos
Dimension Diagram
Circuit Diagram
發佈日期: 2022-04-04
| 更新日期: 2022-08-30