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onsemi NVMFWS004N10MC Single N-Channel Power MOSFETs

onsemi NVMFWS004N10MC Single N-Channel Power MOSFETs provide a 138A continuous drain current, 3.9mΩ at 10V RDS(ON), and 100V drain-to-source voltage. The NVMFWS004N10MC is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101-qualified MOSFET is PPAP-capable and ideal for automotive applications.

Features

  • Small footprint (5mm x 6mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101-qualified and PPAP-capable
  • Pb-free, Halogen-free/BFR-free, beryllium-free, and RoHS-compliant

Applications

  • 48V systems
  • Switching power supplies
  • Reverse battery protection
  • Power switches (high-side driver, low-side driver, H-bridges, etc)

Specifications

  • 138A maximum continuous drain current
  • 3.9mΩ at 10V RDS(ON) maximum
  • 100V Drain-to-Source voltage
  • ±20V Gate-to-Source voltage
  • 900A pulsed drain current
  • -55°C to +175°C operating junction and storage temperature range

Typical Application

Application Circuit Diagram - onsemi NVMFWS004N10MC Single N-Channel Power MOSFETs
發佈日期: 2024-01-03 | 更新日期: 2024-02-15