onsemi NVMFDx 100V Dual N-Channel Power MOSFETs
onsemi NVMFDx 100V Dual N-Channel Power MOSFETs are high-efficiency, compact solutions designed for demanding power switching applications. These MOSFETs feature low RDS(on) values and fast switching characteristics, making the onsemi NVMFDx ideal for use in DC-DC converters, motor drives, and battery management systems. Housed in a space-saving DFN-8 package, these MOSFETs support high current handling and thermal performance, which is critical for automotive, industrial, and consumer electronics. Each variant offers different current and resistance profiles to suit specific design needs, while maintaining robust avalanche energy ratings and low gate charge for improved efficiency and reliability in high-performance power systems.
Features
- Small 5mm x 6mm footprint for compact designs
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- AEC-Q101 qualified and PPAP capable
- DFN-8 package with wettable flanks
- Lead-free, Halogen-free/BFR-free, Beryllium-free
- RoHS compliant
Applications
- Automotive systems
- Electric power steering
- LED lighting
- Electronic control units (ECUs)
- DC-DC converters
- Point-of-load (POL) converters
- Intermediate bus architectures
- Motor control
- Robotics
- Automation
- Battery management
- Battery protection
- Charging circuits
- Power supplies
Specifications
- 100V drain-source breakdown voltage
- 10.4mΩ to 39mΩ drain-source resistance range
- 20V gate-source voltage
- 3V gate-source threshold voltage
- 21A to 61A continuous drain current range
- 36W to 84W power dissipation range
- 4nC to 26nC gate charge range
- 4.6ns to 11ns typical turn-on delay time range
- 1.7ns to 5.2ns rise time range
- 15ns to 32ns typical turn-off delay time range
- 3ns to 5.5ns fall time range
- -55°C to +175°C operating temperature range
- +260°C peak soldering temperature
Datasheets
Schematic
發佈日期: 2025-05-29
| 更新日期: 2025-06-08