onsemi NVHL025N65S3 N-Channel SUPERFET® III
onsemi NVHL025N65S3 N-Channel SUPERFET® III is an easy-drive, high-voltage Super-Junction (SJ) MOSFET that utilizes charge balance technology. This SUPERFET provides outstanding low ON-resistance and low gate charge performance. The NVHL025N65S3 SUPERFET minimizes conduction loss, offers good switching performance, and withstands extreme dv/dt rate. This SUPERFET manages EMI issues and allows for easy design implementation. Typical applications include automotive PHEV-BEV DC/DC converter and automotive onboard charger for PHEV-BEV.
Features
- Good switching performance
- Withstand extreme dv/dt rate
- Manage EMI issues
- Allows easy design implementation
- AEC-Q101 qualified
- Low effective output capacitance
- 100% Avalanche tested
- Pb-free and RoHS-compliant
Applications
- Automotive Plug-in Hybrid Electric Vehicle (PHEV)-Battery Electric Vehicle (BEV) DC/DC converters
- Automotive onboard chargers for PHEV-BEV
Specifications
- 650V drain-to-source breakdown voltage (BVDSS) (minimum)
- 25mΩ static drain-to-source ON-resistance (RDS(on)) at 10V (maximum)
- 75A drain current (ID) (maximum)
- 236nC low gate charge (QG) (typical)
- -55°C to +150°C operating temperature range
- TO-247-3LD package
NVHL025N65S3 Performance Graph
發佈日期: 2019-03-03
| 更新日期: 2024-01-19