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onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs

onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs deliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V. onsemi NVH4L050N170M1 MOSFETs are optimized for a 20V gate drive. The devices also function effectively with an 18V gate drive, featuring a negative gate voltage drive and reduced turn-off spikes. These devices offer ultra-low total gate charge (105nC), high-speed switching with low capacitance (Coss = 98pF), and 100% avalanche testing for reliability.

Features

  • Typ. RDS(on) = 53m at VGS = 20V
  • Ultra-low gate charge (QG(tot) = 105nC)
  • High-speed switching with low capacitance (Coss = 98pF)
  • 100% Avalanche tested
  • These devices are Pb-free and are RoHS compliant

Applications

  • Automotive on-board charger
  • Automotive DC-DC converter for EV/HEV

Application Circuit Diagram

onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs
發佈日期: 2025-01-20 | 更新日期: 2025-02-21