onsemi Dual N-Channel 80V Automotive Power MOSFET
onsemi Dual N-Channel 80V Automotive Power MOSFET is available in a 5mm x 6mm flat-lead package ideal for compact and efficient designs. The 80V device features a 6.9mΩ RDS(on) (drain-source on-resistance) to minimize conductive losses. The MOSFET includes a wettable flank option available for enhanced optical inspection. The device is also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.
Features
- 6.9mΩ RDS(on) drain-source resistance
- 5mm x 6mm flat-lead compact design
- SMD/SMT mounting style
- 74A continuous drain current
- 20V VGS gate-source
- 2V VGS(TH) gate-source threshold
- 80V VDS drain-source breakdown
- 32nC Qg gate charge
- 90W, 3.1W power dissipation
- 22ns fall time
- 34ns rise time
- 52ns typical turn-off delay
- 15ns typical turn-on delay
- AEC-Q101-qualified and PPAP-capable
- RoHS compliant
- -55°C to +175°C operating temperature range
Applications
- Reverser battery protection
- Switching power supplies
- Power switches (high side driver, low side driver, H-bridges etc.)
- Solenoid driver for ABS, fuel injection
- Motor control for EPS, wipers, fans, seats, etc.
- Load switch for ECU, chassis, body
發佈日期: 2019-10-25
| 更新日期: 2024-02-14