onsemi NVT201xN0 M2 SiC N-Channel MOSFETs
onsemi NVT201xN0 M2 SiC N-Channel MOSFETs provide higher voltage operation, wider temperature ranges, and increased switching frequencies when compared to existing Si technology. These MOSFETs offer low effective output capacitance and ultra-low gate charge, resulting in lower switching losses and higher switching speed capabilities. onsemi NVT201xN0 M2 SiC N-Channel MOSFETs are 100% UIS tested and are AEC-Q101 qualified.
Features
- Low effective output capacitance
- Ultra-low gate charge
- 100% UIS tested
- Qualified according to AEC-Q101
- Halide-free and RoHS-compliant with exemption 7a, Pb-Free 2LI (on second-level interconnection)
Applications
- Automotive on-/off-board chargers
- Automotive DC-DC converters for EV-HEV
- SMPS, solar inverters, UPS, energy storage, EV charging infrastructures
Specifications
- Drain-to-source on resistance [RDS(on)]
- NVT2012N065M2: 18mΩ (typ.) at VGS = 18V
- NVT2016N090M2: 23mΩ (typ.) at VGS = 18V
- Drain-to-source voltage (VDSS)
- NVT2012N065M2: 650V
- NVT2016N090M2: 900V
- Continuous drain current (ID) (TC = +25°C)
- NVT2012N065M2: 180A
- NVT2016N090M2: 148A
- Power dissipation (PD) (TC = 25°C)
- NVT2012N065M2: 375W
- NVT2016N090M2: 789W
- Pulsed drain current (IDM) (TC = +25°C, tp = 100µs)
- NVT2012N065M2: 482A
- NVT2016N090M2: 424A
- Input capacitance (CISS)
- NVT2012N065M2: 5389pF (VDS = 325V, VGS = 0V, f = 1MHz)
- NVT2016N090M2: 5340pF (VDS = 450V, VGS = 0V, f = 1MHz)
- Output capacitance (COSS)
- NVT2012N065M2: 431pF (VDS = 325V, VGS = 0V, f = 1MHz)
- NVT2016N090M2: 310pF (VDS = 450V, VGS = 0V, f = 1MHz)
- Total gate charge [QG(TOT)]
- NVT2012N065M2: 256nC (VDS = 400V, ID = 40A, VGS = -5V/+18V)
- NVT2016N090M2: 250nC (VDS = 425V, ID = 60A, VGS = -5V/+18V)
Additional Resources
Circuit and Marking Diagrams
發佈日期: 2025-11-12
| 更新日期: 2025-11-23