onsemi FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT
onsemi FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT (Insulated Gate Bipolar Transistor) features a robust and cost effective Ultra Field Stop Trench construction. The FGY60T120SQDN provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The FGY60T120SQDN also features an integrated soft and fast co-packaged free wheeling diode with a low forward voltage for fast recovery.
Features
- Extremely efficient Trench with Field Stop technology
- Maximum junction temperature TJ = +175°C
- Low saturation voltage VCE(sat) = 1.7V (typical) at IC = 60A
- 100% Tested for ILM
- Soft fast reverse recovery diode
- Optimized for high-speed switching
- TO-247-3 package
- RoHS compliant
Applications
- Solar inverters
- UPS
Package Dimensions
發佈日期: 2019-02-26
| 更新日期: 2024-07-31