onsemi FGHL50T65SQ FS4 High-Speed IGBT
onsemi FGHL50T65SQ FS4 High-Speed IGBT is a single Insulated-Gate Bipolar Transistor that uses the novel Field Stop 4th generation technology. This IGBT features high current capability, low saturation voltage, high input impedance, and fast switching. The FGHL50T65SQ IGBT provides good performance and high efficiency with low conduction and switching losses. This TO-247-3L packaged IGBT operates in 650V collector-to-emitter voltage and 50A collector current. Typical applications include Power Factor Correction (PFC), solar inverters, UPS, Electronic Switching Systems (ESS), welders, and telecom.Features
- Employs Field Stop 4th generation technology
- Low conduction loss
- Low switching loss
- High-speed switching
- High current capability
- High input impedance
- Tightens parameter distribution
- Positive temperature coefficient for easy parallel operation
- RoHS compliant
Applications
- PFC
- Solar inverters
- Welders
- UPS
- Telecom
- Electronic Switching Systems (ESS)
Specifications
- 650V collector-to-emitter voltage (VCES)
- ±20V gate-to-emitter voltage (VGES)
- 200A collector current (IC) at TC = +25°C (maximum)
- 268W power dissipation (PD) at TC = +25°C (maximum)
- 1.6V low saturation voltage VCE(sat) at IC = 50A (typical)
- -55°C to +175°C operating junction temperature range
- TO-247-3L package
Resources
FGHL50T65SQ Performance Graph
發佈日期: 2019-03-04
| 更新日期: 2024-01-18
