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onsemi NVTFS6H860NL Single N-Channel Power MOSFETs

onsemi NVTFS6H860NL Single N-Channel Power MOSFET comes in compact and efficient designs with high thermal performance. This MOSFET features low drain-to-source resistance (RDS(on)) to minimize conduction losses and low capacitance to minimize driver losses. The NVTFS6H860NL MOSFET is AEC-Q101 qualified and PPAP capable. This onsemi MOSFET comes in a 3.3mm x 3.3mm package. Typical applications include reverse battery protection, power switches (high-side drivers, low-side drivers, and H-bridges), and switching power supplies.

Features

  • Low RDS(on) to minimize conduction losses
    • 20mΩ mat 10V (maximum)
    • 26mΩ at 4.5V (maximum)
  • 80V drain-to-source voltage (V(BR)DSS)
  • 30A maximum drain current (ID)
  • Low capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable
  • 3.3mm x 3.3mm dimensions

Applications

  • Reverse battery protection for solenoid drivers
  • Power switches (high-side drivers, low-side drivers, and H-bridges) for motor control
  • Switching power supplies

Additional Resource

發佈日期: 2020-09-18 | 更新日期: 2024-06-12