onsemi FFSH1265BDN-F085 650V SiC Schottky Diodes
onsemi FFSH1265BDN-F085 650V 12A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSH1265BDN-F085 SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, reduced system size, and increased cost-effectiveness. The FFSH1265BDN-F085 650V, 12A SiC Schottky Diodes are available in a TO-247-3LD package.Features
- +175°C maximum junction temperature
- 24.5mJ avalanche rated
- High surge current capacity
- Positive temperature coefficient
- Ease of paralleling
- No Reverse Recovery / No Forward Recovery
- AEC-Q101 qualified
- Lead-free
- Halogen-free/BFR-free
- RoHS compliant
Applications
- Automotive HEV-EV
- Onboard chargers
- DC converters
Electrical Connection
發佈日期: 2019-11-07
| 更新日期: 2024-06-24
