onsemi MMBFJ110 25V N-Channel JFET
onsemi MMBFJ110 25V N-Channel JFET is designed for digital switching applications where very low on-resistance is mandatory. The MMBFJ110 N-Channel JFET has a drain-gate voltage of 25 volts and a drain-source on-resistance of 18Ω. The total dissipation for this device is 460 mW. The onsemi MMBFJ110 25V N-Channel JFET comes in a compact SuperSOT-3 package to help save board space.
Features
- This device is designed for digital switching applications where very low on-resistance is mandatory
- 58 sources from the process
- 25V drain-gate voltage
- 10mA forward gate current
- 18Ω drain-source on-resistance
- 460mW total device dissipation
發佈日期: 2011-12-08
| 更新日期: 2022-03-11