onsemi FDMS36xxS功率級雙重非對稱MOSFET

Fairchild Semiconductor FDMS36xxS功率級雙重非對稱MOSFET模組提供市面上所有5mm x 6mm雙重MOSFET解決方案之中最高的輸出電流能力。Fairchild FDMS36xxS雙重非對稱MOSFET在PQFN封裝中整合了控制和同步MOSFET,以及一個單片肖特基本體二極管。元件內部已連接切換節點,方便將同步降壓轉換器置入和佈線。控制MOSFET和同步MOSFET的設計均能提供最佳的功率效率,輸出電流高達30A。這些Fairchild Semiconductor裝置在高性能運算的額定擊穿電壓下,能達到業界領先的低於2mΩ低壓側rDS(on)值。FDMS36xxS MOSFET經優化設計,能把300kHz至600kHz頻率下的合併傳導和切換耗損降至最低,從而為負載點和多相位同步降壓DC-DC應用提供可靠、高功率效率的性能。

特點

  • Integrated control FET (high side) and synchronous FET (low side)
  • MOSFETs and Schottky body diode in 5mm x 6mm PQFN package
  • Reduces footprint area by replacing two or three 5mm x 6mm components
  • Provides high power density for point-of-load and multi-phase synchronous buck DC-DC applications
  • Clip technology reduces synchronous FET (low side) RDS(ON) to below 2mΩ
  • Shielded gate technology reduces switch node ringing, which eliminates need for external snubbers or gate resistors in most applications
  • Ultra-low source inductance on synchronous FET
  • Conventional pinout and footprint

應用

  • DC-DC synchronous-buck conversion
  • Desktops, notebooks, and servers
  • Telecommunications, routing, and switching

影片

發佈日期: 2011-06-17 | 更新日期: 2024-02-01