NXP Semiconductors BFU5x NPN Wideband Silicon RF Transistors

NXP Semiconductors BFU5x NPN Wideband Silicon RF Transistors are AEC-Q101 qualified, low noise, high breakdown RF transistors suitable for small signal to medium power applications up to 2GHz. Offering exceptional performance, BFU5x RF Transistors generate 20dB of maximum gain and a noise figure of 0.7dB at 900MHz. These devices allow for better signal reception at low to medium power and enable RF receivers to operate more robustly in noisy environments. When used as (low-noise) amplifiers or oscillators, BFU5x RF Transistors support high supply voltages and high breakdown voltages. This makes these devices well-suited for automotive, communication, and industrial applications. The product family is available in a wide range of industry-standard packages, including SOT323, SOT23, and SOT143.

Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified
  • Suitable for small signal to medium power applications up to 2GHz
  • Enable RF receivers to operate more robustly in noisy environments
  • Minimum noise figure (NFmin) = 0.65dB at 900MHz
  • Maximum stable gain 20dB at 900MHz; 22dB at 900MHz (BFU590Q)
  • 11GHz or 8GHz fT silicon technology

Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2GHz
  • Low noise amplifiers for ISM applications
  • Large signal amplifiers for ISM applications
  • Medium power amplifiers (500mW at a frequency of 433MHz or 866MHz)
  • ISM band oscillators 
  • Automotive
  • Satellite
  • Broadcast
  • FM radio
  • General-purpose
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零件編號 規格書 連續集電極電流 集電極最大直流電流 操作頻率 輸出功率 Pd - 功率消耗 RoHS - 貿澤
BFU530WX BFU530WX 規格書 40 mA 65 mA 11 GHz 10 dBm 450 mW Y
BFU520WX BFU520WX 規格書 30 mA 50 mA 10 GHz 7 dBm 450 mW Y
BFU520YX BFU520YX 規格書 30 mA 50 mA 10 GHz 7 dBm 450 mW Y
BFU530R BFU530R 規格書 40 mA 65 mA 11 GHz 10 dBm 450 mW Y
BFU530XRR BFU530XRR 規格書 40 mA 65 mA 11 GHz 10.5 dBm 450 mW Y
BFU590QX BFU590QX 規格書 200 mA 300 mA 8 GHz 22 dBm 2 W Y
BFU550R BFU550R 規格書 50 mA 80 mA 11 GHz 13.5 dBm 450 mW Y
BFU550WX BFU550WX 規格書 50 mA 80 mA 11 GHz 13.5 dBm 450 mW Y
BFU530XAR BFU530XAR 規格書 40 mA 65 mA 11 GHz 10 dBm 450 mW Y
發佈日期: 2014-09-12 | 更新日期: 2025-11-26