Nexperia NX6008NBK N-channel Trench MOSFETs

Nexperia NX6008NBK N-channel Trench MOSFETs are designed for fast switching actions and feature low threshold voltage. These MOSFETs operate at 60V drain-source voltage (VDS), 8V maximum gate-source voltage (VGS), and -55°C to 150°C junction temperature range (Tj). The NX6008NBK MOSFETs are used in applications like relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • SOT323, SOT363, and SOT23 SMD packages
  • ElectroStatic Discharge (ESD) protection > 2kV HBM

Specifications

  • 60V drain-source voltage (VDS)
  • 8V maximum gate-source voltage (VGS)
  • -55°C to 150°C junction temperature range (Tj)
  • -65°C to 150°C storage temperature range (Tstg)

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Characteristics Curve

Performance Graph - Nexperia NX6008NBK N-channel Trench MOSFETs
View Results ( 3 ) Page
零件編號 規格書 封裝/外殼 通道數 Id - C連續漏極電流 Rds On - 漏-源電阻 Qg - 閘極充電 Pd - 功率消耗 配置 下降時間
NX6008NBKSX NX6008NBKSX 規格書 SOT-363-6 2 Channel 220 mA 2.7 Ohms 460 pC 286 mW Dual 4 ns
NX6008NBKWX NX6008NBKWX 規格書 SOT-323-3 1 Channel 250 mA 2.8 Ohms 500 pC 300 mW Single 3 ns
NX6008NBKR NX6008NBKR 規格書 SOT-23-3 1 Channel 270 mA 2.8 Ohms 500 pC 330 mW Single 3 ns
發佈日期: 2022-01-20 | 更新日期: 2022-03-11