GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low R_DS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

Features

Available in 650V and 1200V variants
Developed using a proprietary trench-assisted planar technology
Optimized for faster switching speeds, higher efficiency, and increased power density
30% longer short-circuit withstand

Deliver high-speed, cool-running performance, with up to +25°C lower case temperature
Enables AI PSUs up to 10kW and power per rack up to 100kW to 120kW range
100%-tested avalanche capability