返回至MACOM

MACOM MAGX-100027 50V GaN on Si HEMT Amplifiers

MACOM MAGX-100027 50V GaN on Si (Gallium Nitride on Silicon) HEMT (High-Electron-Mobility Transistor) Amplifiers are high-power devices optimized for DC to 2.7GHz frequency operation. The MAGX-100027 Amplifiers support both CW (Continuous Wave) and pulsed operation with peak output power levels from 15W to 300W. Each MACOM MAGX-100027 50V GaN device integrates a pair of isolated, symmetric amplifiers and is internally pre-matched.

The MAGX-100027 GaN on Si HEMT Amplifiers are offered in lead-free TO-272S-2, TO-272S-4I, and DFN14 packages.

Features

  • 0MHz to 2700MHz frequency range
  • Suitable for linear and saturated applications
  • CW and pulsed operation
  • Internally pre-matched
  • +260°C reflow compatible
  • 50V operation
  • 100% RF tested
  • RoHS compliant
  • Package options
    • TO-272S-2
    • TO-272S-4I
    • DFN14

Applications

  • Avionics
  • Military radio
  • Cellular infrastructure
  • Radar
  • RF energy
  • Test and measurement

TO-272S-2 Pin Configuration

Mechanical Drawing - MACOM MAGX-100027 50V GaN on Si HEMT Amplifiers

TO-272S-4I Pin Configuration

Mechanical Drawing - MACOM MAGX-100027 50V GaN on Si HEMT Amplifiers

DFN15 Pin Configuration

Mechanical Drawing - MACOM MAGX-100027 50V GaN on Si HEMT Amplifiers
發佈日期: 2020-06-24 | 更新日期: 2024-06-04