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IXYS IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low VSAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

Features

  • Optimized for low conduction losses
  • Positive thermal coefficient of VCE(SAT)
  • Low gate drive requirement
  • High power density
  • 55A and 85A input current ratings (IC110) at +110°C
  • 5kHz switching frequency
  • Available packages
    • TO-268HV-3
    • TO-247-3

Applications

  • Power inverters
  • Uninterrupted power supply (UPS)
  • Motor drives
  • Switch mode power supply (SMPS)
  • PFC circuits
  • Battery chargers
  • Welding machines
  • Lamp ballasts
  • Inrush current protector circuits
View Results ( 53 ) Page
零件編號 規格書 封裝/外殼 連續集電極電流在25 C Pd - 功率消耗 系列 集電極最大連續電流Ic
IXYP48N65A5 IXYP48N65A5 規格書 TO-220-3L 130 A 326 W Trench 130 A
IXYH100N65C5 IXYH100N65C5 規格書 TO-247-3 230 A 750 W Trench 230 A
IXYA50N65C5 IXYA50N65C5 規格書 TO-263AB-2 110 A 650 W Trench 110 A
IXYA48N65A5 IXYA48N65A5 規格書 TO-263-2L 130 A 326 W Trench 130 A
IXYA55N65B5 IXYA55N65B5 規格書 TO-263-2L 122 A 395 W Trench 122 A
IXYK140N120A4 IXYK140N120A4 規格書 TO-264-3 480 A 1.5 kW Trench 480 A
IXYH85N120A4 IXYH85N120A4 規格書 TO-247-3 300 A 1.15 kW Trench 520 A
IXXX160N65B4 IXXX160N65B4 規格書 TO-247-3 310 A 940 W Trench 160 A
IXXK200N65B4 IXXK200N65B4 規格書 TO-264-3 480 A 1.63 kW Trench 200 A
IXYT85N120A4HV IXYT85N120A4HV 規格書 D3PAK-3 (TO-268-3) 300 A 1.15 kW Trench 520 A
發佈日期: 2020-05-29 | 更新日期: 2024-05-28