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IXYS IXTQ34N65X2M & IXTQ48N65X2M X2-Class Power MOSFETs

IXYS IXTQ34N65X2M and IXTQ48N65X2M X2-Class Power MOSFETs feature a 650V drain-source breakdown voltage and either a 34A or 48A continuous drain current. IXYS IXTQ34N65X2M and IXTQ48N65X2M MOSFETs are N-channel enhancement mode, avalanche-rated devices that operate over a -55°C to +150°C operating temperature range. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and more.

Features

  • Plastic over-molded tab for electrical isolation
  • Avalanche rated
  • Fast intrinsic diode
  • 2500V~ electrical isolation
  • Low package inductance

Applications

  • Switch-mode and resonant-mode power supplies
  • DC-DC converters
  • Laser drivers
  • AC and DC motor drives
  • Robotics and servo controls

Specifications

  • 650V drain-source breakdown voltage
  • Continuous drain current
    • 34A (IXTQ34N65X2M)
    • 48A (IXTQ48N65X2M)
  • RDS(on) drain-source resistance
    • ≤ 96mΩ (IXTQ34N65X2M)
    • ≤ 65mΩ (IXTQ48N65X2M)
  • -55°C to +150°C operating temperature range

Datasheets

發佈日期: 2021-04-21 | 更新日期: 2022-03-11