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IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

Features

  • SiC MOSFET Technology with –3/+15V to 18V gate drive (IXSA65N120L2-7TR, IXSA110N65L2-7TR, IXSG110N65L2K, IXSH65N120L2KHV, and IXSH100N65L2KHV)
  • High blocking voltage with low on-state resistance
  • High-speed switching with low capacitance
  • High operating junction temperature capability (IXSG40N65L2K, IXSG60N65L2K, IXSG110N65L2K)
  • Ultra-fast intrinsic body diode
  • Kelvin source contact
  • Maximum virtual junction temperature of Tvj = +175°C (IXSA20N120L2-7TR, IXSA40N65L2-7TR, IXSA60N65L2-7TR, IXSA65N120L2-7TR,  IXSA110N65L2-7TR, IXSH20N120L2KHV, IXSH40N65L2KHV, IXSH60N65L2KHV, IXSH65N120L2KHV, and IXSH100N65L2KHV)
  • MSL1 rated

Applications

  • IXSA20N120L2-7TR
    • EV charging infrastructures
    • Power factor correction
    • Telecom server power
    • Motor drives
    • Solar boosters
    • Industrial power supplies
    • Energy storage systems
  • IXSH100N65L2KHV
    • EV charging infrastructure
    • Solar inverters
    • DC-DC converters
    • Industrial SMPS
    • Energy storage system
    • UPS
  • IXSG40N65L2K, IXSG60N65L2K, and IXSG110N65L2K
    • EV charging infrastructures
    • Induction heating
    • Motor drivers
    • Solar inverters
    • Switch-mode power supplies
    • Energy storage systems
  • IXSA60N65L2-7TR
    • EV charging infrastructures
    • Solar boosters
    • Switch-mode power supplies
    • UPS
    • Energy storage systems
  • IXSA40N65L2-7TR, IXSH20N120L2KHV, IXSH40N65L2KHV, IXSH60N65L2KHV, and IXSH65N120L2KHV
    • Switch-mode power supplies
    • UPS
    • EV charging infrastructures
    • Energy storage systems
  • IXSA110N65L2-7TR
    • Switch-mode power supplies
    • UPS
    • Motor drives
    • Induction heating
    • Solar boosters
    • Energy storage system
  • IXSA65N120L2-7TR
    • EV charging infrastructure
    • PV inverters
    • Power factor correction
    • Induction heating
    • Energy storage system

Pinout Diagrams

Chart - IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs
View Results ( 13 ) Page
零件編號 規格書 封裝/外殼 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Pd - 功率消耗 Qg - 閘極充電
IXSH65N120L2KHV IXSH65N120L2KHV 規格書 TO-247-4L 1.2 kV 65 A 52 mOhms 375 W 110 nC
IXSA65N120L2-7TR IXSA65N120L2-7TR 規格書 TO-263-7L 1.2 kV 65 A 53 mOhms 417 W 110 nC
IXSG110N65L2K IXSG110N65L2K 規格書 TOLL-8 650 V 111 A 33 mOhms 600 W 125 nC
IXSA110N65L2-7TR IXSA110N65L2-7TR 規格書 TO-263-7L 650 V 111 A 33 mOhms 600 W 125 nC
IXSA40N65L2-7TR IXSA40N65L2-7TR 規格書 TO-263-7 650 V 43 A 78 mOhms 174 W 64 nC
IXSA60N65L2-7TR IXSA60N65L2-7TR 規格書 TO-263-7 650 V 60 A 53 mOhms 249 W 94.7 nC
IXSH100N65L2KHV IXSH100N65L2KHV 規格書 TO-247-4L 650 V 99 A 33 mOhms 454 W 125 nC
IXSH20N120L2KHV IXSH20N120L2KHV 規格書 TO-247-4 1.2 kV 20 A 208 mOhms 136 W 29 nC
IXSH40N65L2KHV IXSH40N65L2KHV 規格書 TO-247-4 650 V 43 A 78 mOhms 174 W 64 nC
IXSA20N120L2-7TR IXSA20N120L2-7TR 規格書 TO-263-7 1.2 kV 20 A 208 mOhms 136 W 29 nC
發佈日期: 2025-09-10 | 更新日期: 2025-09-24