ISSI Ultra-Low Power SRAM
ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.Features
- Ultra-low-power CMOS SRAM
- High-speed access time: 35ns, 45ns, 55ns high-speed access time
- CMOS low power operation
- 36mW (typical) operating
- 9µW (typical) CMOS standby
- TTL compatible interface levels
- Single power supply
- 1.8V ±10% Vcc (IS62/65WV2568DALL)
- 2.5V–3.6V Vcc (IS62/65WV2568DBLL)
- Fully static operation with no clock or refresh required
- Three state outputs
- Industrial temperature available
- Lead-free available
- Asynchronous SRAM
- Broad Solution
- x8, x16, and x32 configurations available
- 5V/3.3V/1.8V VDD Power Supply
- Commercial, industrial, and automotive temperature (-40°C to +125°C) support
- BGA, SOJ, SOP, sTSOP, and TSOP packages
- ECC feature for High-Speed Asynchronous SRAMs
- Long-term support
- Broad Solution
Applications
- Consumer
- Telecom
- Handheld/Wireless
- Networking
- Industrial Products
- Portable and Wired
- Automotive
IS62/65WV2568DxLL Block Diagram
Asynchronous SRAM Block Diagram
發佈日期: 2009-07-17
| 更新日期: 2024-03-05
