ISSI Ultra-Low Power SRAM

ISSI Ultra-Low Power SRAM includes high-speed (35ns, 45ns, 55ns access time) CMOS devices as well as Asynchronous SRAM with x8, x16, and x32 configurations. ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2Mb static RAMs organized as 256K words by 8 bits. These SRAM devices are fabricated using ISSI high-performance CMOS technology. This highly reliable process, coupled with innovative circuit design techniques, yields high-performance and low-power-consumption devices. ISSI Asynchronous SRAMs include 5V, High-Speed/Low Power, Ultra-Low Power, and Pseudo SRAM (PSRAM)/CellularRAM™. These Asynchronous SRAMs are used throughout Consumer, Industrial, Automotive, Telecom, and Networking applications.

Features

  • Ultra-low-power CMOS SRAM
    • High-speed access time: 35ns, 45ns, 55ns high-speed access time
    • CMOS low power operation
    • 36mW (typical) operating
    • 9µW (typical) CMOS standby
    • TTL compatible interface levels
    • Single power supply
      • 1.8V ±10% Vcc (IS62/65WV2568DALL)
      • 2.5V–3.6V Vcc (IS62/65WV2568DBLL)
    • Fully static operation with no clock or refresh required
    • Three state outputs
    • Industrial temperature available
    • Lead-free available
  • Asynchronous SRAM
    • Broad Solution
      • x8, x16, and x32 configurations available
    • 5V/3.3V/1.8V VDD Power Supply
    • Commercial, industrial, and automotive temperature (-40°C to +125°C) support
    • BGA, SOJ, SOP, sTSOP, and TSOP packages
    • ECC feature for High-Speed Asynchronous SRAMs
    • Long-term support

Applications

  • Consumer
  • Telecom
  • Handheld/Wireless
  • Networking
  • Industrial Products
  • Portable and Wired
  • Automotive

IS62/65WV2568DxLL Block Diagram

Block Diagram - ISSI Ultra-Low Power SRAM

Asynchronous SRAM Block Diagram

Block Diagram - ISSI Ultra-Low Power SRAM
發佈日期: 2009-07-17 | 更新日期: 2024-03-05