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ISSI IS29GL128 NOR Flash Memory Devices

ISSI IS29GL128 NOR Flash Memory Devices offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. These memory devices feature a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation. The IS29GL128 memory devices thus offer faster effective programming time than standard programming algorithms. These memory devices are ideal for embedded applications that require higher density, better performance, and low power consumption. 

The ISSI IS29GL128 NOR Flash Memory Devices are available in thin small outline package (TSOP) and ball-grid array (BGA) package options.

Features

  • 8-word/16-byte page read buffer
  • 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
  • Secured Silicon Sector (SSR) region
  • 512-word/1024-byte sector for permanent, secure identification
  • 256-word Factory Locked SSR and 256-word customer locked SSR
  • Uniform 64Kword/128KB sector architecture
  • Suspend and resume commands for the program and erase operations
  • Write operation status bits indicate program and erase operation completion
  • Support for Common Flash Interface (CFI)
  • Volatile and non-volatile methods of advanced sector protection
  • WP#/ACC input
  • Accelerates programming time (when VHH is applied) for greater throughput during system production
  • Protects first or the last sector regardless of sector protection settings
  • Hardware reset input (RESET#) resets the device
  • Ready/Busy# output (RY/BY#) detects program or erase cycle completion
  • Minimum 100K program/erase endurance cycles

Specifications

  • Fast access time at -40°C to +125°C:
    • 70ns at a VCC range from 3V to 3.6V and VIO range from 3V to 3.6V
    • 1.65V to 3.6V VIO input/output
    • All input levels (address, control, and DQ input levels) and outputs are determined by the voltage on VIO input
  • -40°C to +105°C operating temperature range (extended grade)
  • Single power supply operation from 2.7V to 3.6V for read and write operations

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Offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns.

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IS29GL128 Block Diagram

Block Diagram - ISSI IS29GL128 NOR Flash Memory Devices
View Results ( 12 ) Page
零件編號 規格書 說明 封裝/外殼 標準包裝數量
IS29GL128-70SLEB-TR IS29GL128-70SLEB-TR 規格書 NOR快閃 128Mb, 56 pin TSOP, 3V, RoHS, T&R, Lowest Sector Protected TSOP-56 800
IS29GL128-70DLET IS29GL128-70DLET 規格書 NOR快閃 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, Highest Sector Protected BGA-64 260
IS29GL128-70DLEB IS29GL128-70DLEB 規格書 NOR快閃 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, Lowest Sector Protected BGA-64 260
IS29GL128-70FLEB IS29GL128-70FLEB 規格書 NOR快閃 128Mb, 64 Ball BGA11X13mm), 3V, RoHS, Highest Sector Protected BGA-64 144
IS29GL128-70FLET IS29GL128-70FLET 規格書 NOR快閃 128Mb, 64 Ball BGA(11X13mm), 3V, RoHS, Highest Sector Protected BGA-64 144
IS29GL128-70SLEB IS29GL128-70SLEB 規格書 NOR快閃 128Mb, 56 pin TSOP, 3V, RoHS, Lowest Sector Protected TSOP-56 96
IS29GL128-70FLEB-TR IS29GL128-70FLEB-TR 規格書 NOR快閃 128Mb, 64 Ball BGA(11X13mm), 3V, RoHS, T&R, Highest Sector Protected BGA-64 2000
IS29GL128-70FLET-TR IS29GL128-70FLET-TR 規格書 NOR快閃 128Mb, 64 Ball BGA(11X13mm), 3V, RoHS, T&R, Highest Sector Protected BGA-64 2000
IS29GL128-70SLET IS29GL128-70SLET 規格書 NOR快閃 128Mb, 56 pin TSOP, 3V, RoHS, Highest Sector Protected TSOP-56 96
IS29GL128-70DLEB-TR IS29GL128-70DLEB-TR 規格書 NOR快閃 128Mb, 64 Ball BGA(9X9mm), 3V, RoHS, T&R, Lowest Sector Protected BGA-64 2500
發佈日期: 2018-07-25 | 更新日期: 2024-03-05