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ISSI HYPERRAM™ Self-refresh DRAM

ISSI HYPERRAM™ Self-Refresh DRAMs are high-speed CMOS with a HYPERBUS™ interface. The HYPERBUS is a low signal count, Double Data Rate (DDR) interface that allows high-speed read and write throughput. These devices are available in KGD/KTD and 24-pin BGA packages with 32Mb, 64Mb, 128Mb, and 256Mb densities. Other features include hidden refresh operation and low power consumption. These memory devices are ideal for mobile and automotive applications.

Features

  • Hidden refresh operation
  • Low power consumption
  • Low Bus signal count interface
    • 12 pins for 1.8V
    • 11 pins for 3.0V
    • Chip Select
    • 8-bit data bus
    • Read-Write Data Strobe (RWDS)
  • High Performance
    • Up to 333MB/s throughput
    • Double-Data Rate (DDR)
    • 166MHz clock rate (333MB/s) at 1.8V VCC
    • 100MHz clock rate (200MB/s) at 3.0V VCC
    • Sequential burst transactions
  • Package
    • 24-Ball FBGA footprint
    • KGD/KTD

Applications

  • Infotainment
  • Advanced driver assistance system
  • Smart appliance
  • Factory automation
  • Medical
  • LED projector
  • D-SLR camera
  • Auto-cluster

HyperRAM Interface

ISSI HYPERRAM™ Self-refresh DRAM
發佈日期: 2017-06-05 | 更新日期: 2024-03-05