Infineon Technologies TLF11251LD Gate Driver & MOSFET

Infineon Technologies TLF11251LD Gate Driver and MOSFET is an integrated half-bridge with a high-side P-channel and a low-side N-channel MOSFET in a single package. The integrated level shifting stage allows for converting the input logic signals to the supply voltage level of the gate drivers. This level shifter and the gate driver provide a dead-time generation to simplify the interface with the embedded core voltage regulator of the MCUs. The TLF11251LD device can enable the usage of OPTIREG^TM PMIC TLF35584/85 for 2.5A with high-end 2nd generation TriCor^TM AURI^TM 32-bit MCUs TC38x/TC39x. The device integrates protection features against overcurrent at high-side MOSFETs, low-side MOSFETs, and against overtemperature events.

The TLF11251LD device has a single control input with integrated dead-time logic for optimized control and high efficiency. This half-bridge with an integrated driver and the level shifter operates at a temperature range of -40°C to 150°C and a voltage range of 3.5V to 7V. It comes in a PG-TSON-10 package and is AEC-qualified. This half-bridge with an integrated driver and the level shifter is ideal for automotive applications.

Features

Integrated PMOS and NMOS complementary output bridge with 2.5A current capability
Integrated gate drivers
Single control input with an integrated dead-time logic allows for optimized control and high-efficiency
Output current sensing and limitation
Overtemperature protection

Low quiescent current
No external dead-time adjustment required
Green product (RoHS compliant)

Specifications

-0.3V to 7V supply voltage range
-2.5A to 2.5A continuous drain current range
-4.4A to 4.4A pulsed drain current range

-40°C to 150°C junction temperature range
-55°C to 150°C storage temperature range

Applications

Functional safety-relevant applications
- Powertrain (e.g. EMS)
- Electrical drive train (e.g inverter)
- Safety (e.g. sensor fusion)
- Chassis (e.g. domain control)
- Body (e.g. gateway)