Infineon Technologies Q-DPAK Full Bridge V2.1 Evaluation Board

Infineon Q-DPAK Full Bridge V2.1 Evaluation Board demonstrates optimal usage of Generation 2 CoolSiC™ 750V G2 SiC power MOSFETs in Q-DPAK packages. The eval board is optimized for fast switching and not a switching-loss evaluation. Infineon's Q-DPAK Full Bridge V.2.1 eval board is built for single pulses rather than continuous switching. The board contains four 750V CoolSiC switches in a full-bridge assembly, corresponding Infineon gate drivers, small DC-DC converters to provide isolated voltage for each domain, and passives to support the DC link and to terminate power loops.

The evaluation board showcases the optimum usage of high-speed switching devices in Q-DPAK packages. Each MOSFET can be controlled by external PWM signals provided via SMA terminals.

Features

Full-bridge topology enables the highest flexibility for lab evaluation
Building block for the evaluation of PFC and soft-switching DC-DC converters
Fast switching through optimal PCB layout
Operates in single- and continuous-PWM
2.6mm clearance between high-voltage potentials on the top and bottom layers

0.6mm clearance for inner layers
Optimized gate-loop design for high-speed driving
Probing ports for drain-to-source voltage (Vds) and gate-to-Kelvin source voltage (Vgsk) for both half-bridges

Components

AIMDQ75R016M2H: Infineon CoolSiC™ G2 Automotive Power MOSFET 750V
2EDB9259Y: Infineon EiceDRIVER™ dual-channel isolated gate driver IC in 150mil DSO package

BAT165: Infineon medium power AF Schottky diode
Fully tested PCB