Infineon Technologies IDFW80C65D1 650V Silicon Power Diode
Infineon Technologies IDFW80C65D1 650V Silicon Power Diode is an 80A Rapid 1 switching emitter-controlled device in a TO-247 advanced isolation package. The silicon power diode features low forward voltage, low reverse recovery charge, and low reverse recovery current. This IDFW80C65D1 power diode offers 2500V RMS electrical isolation voltage and 650V repetitive peak reverse voltage. The silicon power diode operates at -40°C to 175°C. This IDFW80C65D1 power diode is a 100% tested isolated mounting surface with Pb-free lead plating. Typical applications include motor control and drives, air conditioning, General Purpose Drives (GPD), and industrial SMPS.
Features
- Temperature stable behavior of key parameters
- Low forward voltage (VF)
- Low reverse recovery charge (Qrr)
- Low reverse recovery current (Irrm)
- 100% tested isolated mounting surface
- Pb-free lead plating
- RoHS compliant
Specifications
- 650V emitter-controlled technology
- 2500VRMS electrical isolation, 50/60Hz, t = 1min
- 1.7V maximum diode forward voltage
- 40µA maximum reverse leakage current
- -40°C to 175°C operating temperature range
- -55°C to 150°C storage temperature range
Applications
- Motor control and drives
- Air conditioning
- General Purpose Drives (GPD)
- Industrial SMPS
Additional Resource
Application Note
發佈日期: 2020-10-20
| 更新日期: 2024-12-06