Infineon Technologies CoolSiC™ MOSFET 1200V Evaluation Platform

Infineon Technologies CoolSiC™ MOSFET 1200V Evaluation Platform demonstrates the characteristics of the 45mΩ CoolSiC™ 1200V SiC Trench MOSFET (IMZ120R045M1) when coupled with the EiceDriver™ Gate Driver ICs. The Evaluation Platform includes a modular Main Board (EVALPSSICDPMAINTOBO1), a Miller Clamp Daughter Board (REFPSSICDP1TOBO1), and a Bipolar Supply Daughter Board (REFPSSICDP2TOBO1).

Features

CoolSiC MOSFET 1200V main board
- V_CC2 gate drive voltage supply from -5V to +20V
- V_CC1 supply fixed at +5V
- Gate connection via SMA BNC connector
- Current measurement via optional coaxial shunt
- Optimized commutation loop
- External load inductor connection
- Includes heatsink

Miller clamp daughterboard
- Minimal gate drive loop
- R_g ON and R_g OFF are changeable
- V_CC2 +15V to 0V GND
- Active miller clamp function
Bipolar supply daughterboard
- Minimal gate drive loop
- R_g ON and R_g OFF are changeable
- V_CC2 +15V to -5V GND2
- Possibility for negative power supply