Infineon Technologies FZ2000R33HE4 & FZ1400R33HE4 3300V IGBT Modules
Infineon Technologies FZ2000R33HE4 and FZ1400R33HE4 3300V Single-Switch IGBT Modules offer TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diodes. Insulated-gate bipolar transistors are three-terminal power semiconductor devices used as electronic switches to combine high efficiency and fast switching. FZ2000R33HE4 is a 2000A 190mm single-switch module. FZ1400R33HE4 is a 1400A 130mm single-switch module. The devices offer high short-circuit capability and current density with low switching losses. Applications include high-power converters, medium-voltage converters, and motor and traction drives.
Features
- Electrical
- High DC stability
- High short-circuit capability
- High current density
- Low switching losses
- Low Qg and Cres
- Low VCEsat
- Tvjop=150°C
- Trench IGBT 4
- VCEsat with a positive temperature coefficient
- Mechanical
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- High power density
- Isolated base plate
Applications
- Active front end (energy recovery)
- High-power converters
- Medium-voltage converters
- Motor drives
- Traction drives
- Uninterruptible Power Systems (UPS)
發佈日期: 2020-01-21
| 更新日期: 2024-09-19