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EPC EPC2304 Enhancement-Mode GaN Power Transistor

Efficient Power Conversion (EPC) EPC2304 Enhancement-Mode Gallium Nitride (GaN) Power Transistor is designed to handle tasks where ultra-high switching frequency and low on-time are advantageous, as well as those where on-state losses dominate. This eGaN® transistor offers exceptionally high electron mobility and low temperature coefficient, allowing low drain-source on resistance RDS(on) of 3.5mΩ typical and 5mΩ maximum. The EPC2304's lateral device structure and majority carrier diode provide exceptionally low total gate charge (QG) and zero reverse recovery (QRR) losses. This 200VDS power transistor from EPC comes in an ultra-small 3mm x 5mm QFN package for higher power density.

Features

  • Higher efficiency – lower conduction and switching losses
  • Zero QRR losses
  • Ultra-small footprint for higher power density
  • Wettable flanks and 0.6mm between high voltage and low voltage pads simplify assembly and inspection
  • Application notes
    • Easy-to-use and reliable gate, gate drive ON = 5V typical, OFF = 0V (negative voltage not needed)
    • Top of FET is electrically connected to source

Applications

  • Synchronous rectification
  • AC-DC chargers, SMPS, and adapters
  • High-frequency DC-DC conversion
  • Motor drives
  • Class-D audio
  • Wireless power
  • High-power LiDAR and dToF
  • Power factor correction (PFC) multilevel converters

Specifications

  • 200V drain-source breakdown voltage (continuous) VDS
  • 3.5mΩ typical and 5mΩ maximum RDS(on)
  • 3mm x 5mm QFN package
  • Moisture sensitivity level (MSL) 1
  • Thermally enhanced package with exposed top and ultra-low thermal resistances for cooler operations

Characteristics

Performance Graph - EPC EPC2304 Enhancement-Mode GaN Power Transistor
發佈日期: 2026-02-13 | 更新日期: 2026-02-16